A new on-chip sensor design for NBTI using slew rate monitoring
نویسندگان
doi
چکیده
In this paper, an on-chip NBTI sensor based on rise transition time di erence measurement of inverter is proposed. This sensor supports both AC and DC stress mode with very short measurement time of 50 nsec. The new sensor, with direct correlation between Vth degradation and its output voltage change, has a resolution of 1 mV per 0.5 mV threshold voltage shift. Di erential structure of the sensor eliminates the e ect of common-mode environmental variation such as temperature. A 65 nm CMOS technology model is used for simulation of the sensor. The average power consumption of this sensor is 0.14 W in stress mode and 4.54 W during measurement mode. The implemented layout area is 98.9 m2.
