An heuristic method for solving an inverse problem in semiconductors governed by a nonlinear coupled system
نویسندگان
1 Research Laboratory in Numerical Analysis and Nonlinear Analysis (LaR2A) Department of Mathematics, Faculty of Sciences, University Abdelmalek Essaadi, BP 2121 M'Hannech II 93030 Tetouan, Morocco.
2 Laboratory of Applied Mathematics and Computer Science, Faculty of Science and Technology, Cady Ayyad University, Marrakesh, Morocco.
doi
10.22034/cmde.2025.62043.2708چکیده
In this work, we utilize a coupled system to describe the carrier density in the Metal-Semiconductor Field-Effect Transistor (MESFET) device. To identify the depletion layer in this semiconductor, we define a cost functional $J$, and then use it to derive the shape optimization problem, for which we prove the existence of a solution. We develop an approach to solve this optimization problem using the finite element method combined with particle swarm optimization. Finally, we present several numerical examples to demonstrate the robustness of our proposed algorithm in identifying the depletion layer in the MESFET device.
