Observation of Raman Gain in Reduced Length of Bismuth Erbium Doped Fiber
نویسندگان
1 Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50630 Kuala lumpur, Malaysia
2 Laser and Biophotonics in Biotechnologies Research Center, Isfahan (Khorasgan) Branch, Islamic Azad University, Isfahan, Iran
3 Laser and Biophotonics in Biotechnologies Research Center, Isfahan (Khorasgan) Branch, Islamic Azad University, Isfahan, Iran
4 Laser and Biophotonics in Biotechnologies Research Center, Isfahan (Khorasgan) Branch, Islamic Azad University, Isfahan, Iran
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چکیده
Raman amplification of a 49 cm Bismuth oxide (Bi2O3) as a nonlinear gainmedium based erbium doped fiber amplifier (EDFA) is reported in new and compactdesign in near infrared spectral regions. The bismuth glass host provides theopportunity to be doped heavily with erbium ions to allow a compact optical gain fiberamplifier design by using reduced fiber length and the 1480 nm low pump poweraround 150 mW. A extended Raman amplification bandwidth of 45 nm, from 1520-1565 nm (C-band window) wavelengths is empirically proposed in a backward anddualwavelength pumped Bi-EDF by employing 350 mW Raman pump in 1440 nm.Because of the short length gain medium as a nonlinear Bi-EDF, amplification of 3 dBis achieved over a C-band wavelength range. This simple C-band Raman amplifierbased Brillouin and ASE backscattering was constructed to test the forward, backwardand dual-wavelength pump laser and on-off gain. A peak gain of 1.53 dB was obtainedwith a 3-dB bandwidth of 45 nm that the varieties of gain is 2.02 dB around 1545 nm inbackward pumping design. It array will be employ for sensing, spectroscopy andtelecommunication systems.
