Enhancing Efficiency of Two-bond Solar Cells Based on GaAs/InGaP
نویسندگان
1 Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran.
2 Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran
3 Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran.
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چکیده
Multi-junction solar cells play a crucial role in the ConcentratedPhotovoltaic (CPV) Systems. Recent developments in CPV concerning high powerproduction and cost effective-ness along with better efficiency are due to theadvancements in multi-junction cells. This paper presents a simulation model of thegeneralized Multi-junction solar cell and introduces a two-bond solar cell based onInGaP/GaAs with an AlGaAs/GaAs tunnel layer.For enhancing the efficiency of theproposed solar cell, the model adopts absorption enhancement techniques as well asreducing loss of recombination by manipulating number of junctions and varying thematerial properties of the multi-junctions and the tunneling layer. The proposed Multijunctionsolar cell model employing tunnel junctions can improve efficiency up to by35.6%. The primary results of the simulation for the proposed structure indicate that it ispossible to reduce the loss of recombination by developing appropriate lattice matchamong the layers; it is also likely to have suitable absorption level of the phonons.Simulation results presented in this paper are in agreement with experimental results.
