Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature
نویسندگان
1 Barman International Technology Development Company
2 Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran, Iran
3 Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran, Iran
4 1.Physics Group, Faculty of Basic Sciences, Imam Ali University, Tehran, Iran 2.Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran, Iran
5 Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran, Iran
doi
چکیده
Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectron microscopy (TEM) and X-ray diffraction (XRD). The XRD pattern shows thatGaN NS were grown in the hexagonal wurtzite-type crystal structure. The opticalproperties of the grown GaN NS were examined by photoluminescence (PL), UVvisibleand Raman spectroscopy. The PL spectroscopy measurements of the grown GaNNS showed blue shifts as compared to the GaN bulk structure. The Raman spectradisplayed three Raman active optical phonons at 534 cm-1, 570 cm-1 and 730 cm-1 due toA1 (TO), E2 (high) and A1 (LO), respectively.
