فهرست نشریات علمی دسترسی آزاد ایران

This paper shows the scattering mechanism at diluted magneticsemiconductors. The doped magnetic atom produces a scattering potential due to becoupled of itinerant carrier spin of host material with magnetic momentum of the dopedmagnetic atom. Formulas of scattering event were rewritten by the plane waveexpansion and then the electron mobility of DMS was calculated. Calculations showKondo effect on diluted magnetic semiconductors at nonmagnetic phase. Here has beensupposed that the doping concentration is low and so the coupling coefficient betweenmagnetic atoms is weak enough that DMS does not change its magnetic phase. In otherwords, material is on paramagnetic phase. For proofing our model, we have grownZn0.99Mn0.01O with Sol-Gel route. Pure ZnO has also grown with this method for acomparison. Experimental results proved our theoretical model. Therefore as a result, atdiluted magnetic semiconductors similar to diluted magnetic metals in nonmagneticphase can observe kondod's effect .