Modeling of the non-uniform distributed GaN QDs based Infrared Photodetector
نویسندگان
1 Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran 14778-93855, Iran
2 گروه الکترونیک، دانشکده مهندسی مکانیک،برق و کامپیوتر، دانشگاه آزاد اسلامی، واحد علوم و تحقیقات، تهران، ایران
3 Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 55165-163, Iran
doi
چکیده
In this paper, pyramidal shaped GaN-based quantum dots (QDs) with different sizes in each layer, surrounded by is proposed for infrared photodetector mainly to enhance the detector performance. In this model, we are considering the QDs sizes’ distribution to calculate all parameters instead of using Poisson distribution to express the inhomogeneous broadening just in the absorption coefficient. To model the performance of the devices, the Schrödinger equation has been solved using the effective mass approximation; then, the absorption coefficient, the gain, the responsivity, the electron mobility, the dark current, and the detectivity as a function of temperature for different biases are obtained. Significant improvements in the optical behavior are seen in the modeled results at T = 220 K.
