فهرست نشریات علمی دسترسی آزاد ایران

An iteration computation was carried out to investigate electron transport properties in Hg1-xCdxTe. We employed the modified iterative procedure which allows us to increase the computational accuracy in several structures. We considered deformation potential, polar optical phonon, piezoelectric, and ionized impurity scattering. Electron drift mobility is calculated for different temperature and doping dependencies. It was found that the electron drift mobility decreases with the temperature increases from 100K to 300K. Competitions among several temperature-dependent scattering mechanisms create temperature-dependent of MCT mobility. Furthermore, it was concluded that the x-dependence of the Hg1-xCdxTe mobility results primarily from the x-dependence of bandgap, and secondarily the x-dependence of effective masses. In the case of low temperatures, the electron mobility quickly decreases with the increase of doping concentration, while this happens at a slower speed in the case of high temperatures.