فهرست نشریات علمی دسترسی آزاد ایران

In this paper, the electronic properties of vertical Gr-hBN-χ 3 borophene heterostructure (AA stack between Gr and hBN layers), i.e., (Gr-hBN-χ 3 _AA), have been investigated by density functional theory (DFT). By using the tight-binding (TB) model and least-square fitting for TB and DFT band structures, optimal TB parameters are calculated. By exploiting the non-equilibrium Green function technique and capacitive model, we have investigated the vertical tunneling transistor (VTFET) based on Gr-hBN-χ 3 _AA. Also, the figure of merit (FOM) of the device, such as the I ON /I OFF ratio, subthreshold swing, and intrinsic gate-delay time, has been extracted. We have concluded that decreasing the width of the graphene nanoribbon improves the switching ratio, subthreshold swing, and gate-delay time. Also, compared to previous work (VTFET based on Gr-hBN-χ 3 _AB), it is seen that changing the stack between Gr and hBN layers has little effect on the FOM of the device. The gate-delay time of the device is 0.011 ps at room temperature.