Low Phase Noise X-band Dielectric Resonator Oscillator
نویسندگان
1 Faculty of Electrical and Computer Engineering, Semnan University, Semnan, Iran.
2 Faculty of Electrical and Computer Engineering Semnan University, Semnan, Iran.
doi
10.22075/mseee.2022.25767.1090چکیده
In this article, an X-band low phase noise dielectric resonator oscillator is investigated. For this purpose, a dielectric resonator as a frequency stabilization section at the almost center frequency of 12 GHz is designed. The active device is a packaged GaAs FET (an ATF-36077 pHEMT). Firstly, the ATF36077 microwave transistor has been biased. The substrate of this nonplanar oscillator is Rogers RT/Duroid 5880. Finally, the dielectric resonator oscillator has been introduced as a series feedback structure. This presented X-band dielectric resonator oscillator, operating at nearly 12 GHz, exhibits a phase noise of -71 dBc/Hz and -133 dBc/Hz at 1-kHz and 1-MHz frequency offset, respectively. Also, the output power level of nearly 7 dBm is achieved. The second and third harmonic power levels are more than 50 dB and 30 dB lower than the main harmonic power level.
