N+ Pocket Core-Shell Nanotube Tunnel Field-Effect Transistor
نویسندگان
1 Electrical engineering department of Amirkabir university, Tehran 1591634311, Iran
2 Department of Electrical and Computer Engineering,Semnan University, Semnan 3513119111, Iran
3 Department of Electrical and Computer Engineering,Semnan University, Semnan 3513119111, Iran
doi
10.22075/mseee.2022.24935.1080چکیده
One of the attractive candidates for improving the performance of tunnel transistors is cylindrical structures due to their impressive electrostatic control of the gate. But the on-state current of tunnel transistors is still very low compared to MOSFETs. An alternative is to use core-shell nanotubes rather than nanowires. In this article, we present a core-shell TFET nanotube based on a heterogeneous germanium/silicon structure. In our proposed structure, an N+ pocket is employed to enhance the on-state current. A possible manufacturing method is also proposed that is fully compatible with CMOS technology. The main parameters of this transistor are 97.85 μA / μm on-state current, Ion / Ioff ratio of 8.26×108, SSavg mV/dec 21.15, and fT of 878.95 GHz.
