Gate decorated Field Effect Transistors for high sensitivity pH sensing
نویسندگان
1 Nano-electronics Lab, Nano-electronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran.
2 Nano-electronics Lab, Nano-electronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran.
3 Nano-electronics Lab, Nano-electronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran
4 Nano-electronics Lab, Nano-electronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran.
5 Nano-electronics Lab, Nano-electronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran.
6 Nano-electronics Lab, Nano-electronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran.
7 Nano-electronics Lab, Nano-electronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran.
8 Nano-electronics Lab, Nano-electronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran.
doi
چکیده
We present a micro/nano-machining process to introduce nanostructured poly-silicon layer on the gate region of the pH-sensitive field effect transistors. Decoration of the gate of the field effect transistors by nanostructures plays an important role to improve the sensitivity of the pH-sensitive FETs. Electron beam lithography was exploited to realize the poly-Si nanopillars on the gate surface. Comparison between different micro and nanostructures demonstrates the potential of nanopillars to be utilized on the gate of this device rather than micro-conical structures (different size and shapes) and vertically carbon nanotubes. A high sensitivity of 500 mV/pH has been achieved, through the incorporation of silicon based nanopillars.
