فهرست نشریات علمی دسترسی آزاد ایران

This paper presents a novel SiGe:C HBT low-noise amplifier (LNA) architecture, specifically designed to cover the Bluetooth band (2.402–2.4835 GHz) within a wider operational range of 2.2–2.65 GHz. The proposed design introduces an innovative L–C ladder matching technique that generates left half plane (LHP) zeros, effectively canceling the poles and achieving a flat impedance response across a wide frequency range. This approach not only enhances input matching but also contributes to a lower noise figure (NF) by suppressing transistor thermal noise at the output node. Additionally, a new biasing network for the cascode stage is implemented to simultaneously improve S₁₁ and NF, demonstrating high compatibility with the 0.13 µm SiGe:C BiCMOS process. Simulation results show that the proposed LNA achieves a maximum gain of 23 dB, NF of 2.2 dB, and IIP₃ of +14.45 dBm, while consuming only 40 mW from a 3.3 V supply. The LNA maintains stable performance across a 450 MHz bandwidth (2.2–2.65 GHz), resulting in a Figure of Merit (FOM) of 19.2, which outperforms comparable state of the art designs. Owing to its innovative matching and biasing networks, the proposed structure achieves high linearity, excellent gain, and low noise, making it a promising front end solution for next generation Bluetooth and low power wireless communication systems.