فهرست نشریات علمی دسترسی آزاد ایران

This research involves the preparation of (400 ± 20) nm thick Se75S25-xSnx thin films by vacuum thermal evaporation method on glass Slides and studying the effect of laser irradiation on some structural, optical and electrical savor of the films. X-ray diffraction analysis reveals that the films have a random structure at (x = 0 and 5) while single crystal growth starts at (x = 10, 15). After laser irradiation, the diffraction pattern shows an improvement in crystal growth and all films are polycrystalline. FESEM examination also shows a clear effect on the surface morphology of the films exposed to the laser. By measuring the transmittance and absorbance spectra in the wavelength scope (400 - 1100 nm), it was found that the transmittance decreases and the absorbance increases as a function of wavelength with increasing tin content before and after irradiation. It is also shown that the absorbance of the films decreases after laser irradiation while the transmittance increases. The energy gap for the allowed direct transition was also calculated and it was found to decrease with increasing tin content before and after irradiation. It also decreases with irradiation, but the effect of irradiation decreases with increasing metal content. Hall effect analysis revealed that the films prepared before irradiation at (x = 0 and 5) are of the P type, while at (x = 10, 15) they transform to the N type, and the conductivity increases with increasing tin content and the resistivity decreases. After irradiation, all films are of the N type, and the conductivity decreases with increasing tin content and the resistivity increases.