Sensor Utilizing ITO-Silicon Substrate for Gas Detection
نویسندگان
1 Applied Sciences College, University of Technology, Iraq
2 Centre of Nanotechnology and Advanced Material, University of Technology, Iraq
3 College of Materials Engineering, University of Technology, Iraq
4 Laser Science and Technology Department, College of Applied Sciences, Iraq
5 Laser Science and Technology Department, College of Applied Sciences, Iraq
6 College of Materials Engineering, University of Technology, Iraq
doi
10.22052/JNS.2026.02.022چکیده
An effective and size-controlled DC-sputtering approach that produces high-quality thin films and a large deposition area was used to create the In2O3-Sn/Si gas sensor. ITO thin-film structural, optical, and electrical characteristics were thoroughly examined and studied at various doping concentrations. Atomic force microscopy and X-ray diffraction were used to analyze the surface morphology and structure of ITO thin films. According to the XRD process, these films have a polycrystalline structure and are best oriented in the (222), (440), and (400) directions. Crystalline size was shown to decrease as doping levels increased. All of the films had transmittances that were highly transparent (more than 85%) when measured in the wavelength range of 300 nm to 900 nm. Measurements have been made of the sensitivity to NH3 and NO2 gases. Sensitivity to NH3 is higher in In2O3 doped with Sn. Measurements of sensitivity to NO2 gas show that In2O3 doped with Sn is more sensitive to NO2 than to NH3.
