فهرست نشریات علمی دسترسی آزاد ایران

In this work, Cd₁₋ₓCuₓS (x = 0, 0.25, 0.5, 0.75, 1) thin films were deposited on n-Si substrates using aerosol-assisted chemical vapor deposition (AACVD). The films, with an average thickness of 350 ± 10 nm, were investigated to correlate their structural and optical properties with photodetector performance. X-ray diffraction (XRD) confirmed the formation of a pure crystalline phase with a well-ordered lattice. UV-Vis spectroscopy revealed strong absorption in the visible and UV regions, essential for photodetection applications. The fabricated photodetector demonstrated light absorption and emission at specific wavelengths, which can be attributed to electronic transitions within the crystal structure. The Cd₁₋ₓCuₓS/n-Si heterojunction photodetectors exhibited high photoresponsivity (≈0. 306 A/W at 620 nm) and fast response times (<0.34 s), demonstrating efficient charge transfer and suppressed recombination. The enhanced crystallinity further facilitated charge transport, reducing energy loss and improving sensitivity. These findings highlight AACVD-grown Cd₁₋ₓCuₓS as a promising material system for cost-effective, high-performance optoelectronic devices.