Performance Improvement of Double Gate Nano-TFET Via Combination of Dual Material Gate-Drain Overlap and Source Pocket
نویسندگان
1 Institute of nanoscience and nanotechnology, University of Kashan, Kashan, Iran
2 Institute of nanoscience and nanotechnology, University of Kashan, Kashan, Iran
3 Department of Electrical and Computer Engineering, University of Kashan, Iran
doi
10.22052/JNS.2025.03.055چکیده
Although tunneling field effect transistors (TFETs) exhibit low threshold swing and enable good scalability, but TFETs suffer from two main problems: low ON-state current (ION) and intrinsic ambipolar conduction. In this work, we propose a structure of double-gate TFET with 50nm channel length, which has lower ambipolar conduction and higher ON-state current compared to conventional double-gate TFET. In the proposed TEFT, in order to achieve the minimum ambipolar conduction, dual material gate (DMG) has been integrated with the gate-drain overlap (GDO), and in order to simultaneously improve the ambipolar conduction and the ON-state current, the source pocket (SP) has been added to the structure. We show in proposed device, by increasing the length and thickness of the source pocket, the ON-state current increases. In addition, increasing doping of the source pocket shows enhanced ION order up to 4E-3. We compare 4 TFET structures, namely DG-TFET, DMG-DGTFET, GDO-DMG-DGTFET, and the proposed structure (SP-GDO-DMG-DGTFET). We show that the proposed structure has a higher ION/IOFF ratio (1E14) and less ambipolar conduction than other structures under study and is more suitable for digital applications. Also, by calculating transconductance (gm), gate-drain capacitance (Cgd), gate-source capacitance (Cgs), we show that the proposed structure has the highest cut off frequency (0.6THz) compared to other structures under study and is more suitable for high frequency applications.
