فهرست نشریات علمی دسترسی آزاد ایران

In this work, the gallium is introduced into the structure of indium arsenide and contributed to the formation of In0.53Ga0.47As. Simulations are performed to study the behavior of indium arsenide-phosphorene heterostructure tunneling field effect transistors (TFETs). Density functional theory (DFT) in combination with non-equilibrium Green’s function are utilized to reveal the electrical properties and transfer characteristics of the sample in question. Current changes in terms of applied bias voltage, indicates the multiplicity of negative differential resistance (NDRs) in the sample. At Vds = 0.5V, the ratio of peak to valley current (Ip/Iv) is observed to be 138, 10 while at Vds = 0.1V, Ip/Iv ratio reaches 16, 10.3. The subthreshold slope (S) at high and low drain bias is measured at 20, 17.2 mV/decade, respectively. transmission pathway shows the possible path of electrons, and in the on-state, the increase in the volume of the arrows is completely expected.