Nonlinear Behavior CdS Thin Film Nanoparticles Photoresistor Sensor Changed with Annealing Temperature Preparation By a Thermal Evaporation Technique

نویسندگان

1 Department of X-ray techniques, Al-Nisour University College, Baghdad, Iraq

doi
10.22052/JNS.2025.01.005
چکیده

A study of the effect annealing on some structural, optical and electrical properties of pure CdS films on glass bases with thickness 150nm using thermal evaporation technique under pressure (4*10-5)Torr. Structural properties were studied using X-ray diffraction technology the CdS films were shown to have a polycrystalline structure of the cube type and the preferred path [111], also increases grain size with increasing annealing temperature. In the study of Hall Effect, we observed the mobility increases with increasing annealing temperature. From the study, the relationship between bias voltage and current we observed the current increases with increased annealing temperature and the intensity of light falling on photo resistor .the current of the photo resistor is doubling with the double intensity of light falling.