Deposition of Graphene Nanoparticles Prepared by Laser Ablation Method Mixed with Chlorophyll Dye on Silicon Nanowire Substrate as a Detector
نویسندگان
1 Department of physics, College of Science for Women, University of Babylon, Hilla, Iraq
2 Department of physics, College of Science for Women, University of Babylon, Hilla, Iraq
3 Department of physics, College of Science for Women, University of Babylon, Hilla, Iraq
doi
10.22052/JNS.2025.01.033چکیده
Numerous fields find semiconductor nanowires, especially silicon nanowires (SiNWs), appealing due to their distinct electronic characteristic. Accordingly, in this research, A GNPs/Chl./SiNWs nanocomposite was fabricated using laser pulses with a fundamental wavelength of 1064 nm and an energy of 200 mJ/pulse, all at a repetition rate of 5 Hz and 200 pulses. The properties of this nanocomposite were studied through scanning electron microscope (SEM), X-ray diffraction (XRD) and FTIR, as well as the optical properties were studied through UV-Vis. Diffused reflectance spectroscopy and Raman spectra of GNPs/Chl./SiNWs nanocomposite. The results show the XRD of GNPs/Chl./SiNWs nanocomposite at pH=3, has cubic silicon structure with the formation of graphene and graphene oxide nanoparticles. Silicon nanowire was prepared by chemical etching (EMACE) technique with a diameter of 137 nm and a length of 400 nm. GNPs/Chl./SiNWs nanocomposite show the graphene is formed in the form of spherical particles with the mean of dimeter of silicon nanowires is about 135.7 nm. FTIR results showed the formation of graphene and graphene oxide. The results reveal that modifying the surface morphology of the Si substrate to form SiNW successfully reduced the reflection loss of incident radiation over a broad spectral range. Also, GNPs/Chl./SiNWs nanocomposite was used in manufacturing a photodetector and all its parameters were calculated with a quantitative efficiency of up to to18.9% at 650 nm.
