Effects of the Spacer Length on the High-Frequency Nanoscale Field Effect Diode performance
نویسندگان
1 Electrical and Computer Engineering Department, K. N. Toosi University of Technology
2 Electrical and Computer Engineering Department, K. N. Toosi University of Technology
3 Thin Films and Nanoelectronic Lab. Electrical and Computer Engineering Department, University of Tehran
doi
10.7508/jns.2013.04.004چکیده
The performance of nanoscale Field Effect Diodes as a function of the spacer length between two gates is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for S-FED as the spacer length between two gates increases whereas this ratio is approximately constant for M-FED. The high-frequency performance of FEDs is investigated and the cut-off frequency of the intrinsic transistor without parasitic capacitance is calculated. The figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic applications.
