A Simulation Study of Temperature Variation Effects on I-V Characteristics of CNTFET
نویسندگان
1 Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy
2 Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, Italy
doi
10.22034/ijnn.2025.2039466.2555چکیده
In this paper we present a simulation study of temperature variation effects on I-V characteristics in Carbon Nanotube Field Effect Transistor. The study is carried out considering different CNTFET models proposed in the literature in order to identify the one more easily implementable in simulation software for electronic circuit design. At first we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations at different temperatures. Our results are compared with those obtained with two other models: the numerical FETToy model and the Stanford-Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET), obtaining I-V characteristics comparable with those of two examined models, but with CPU calculation times much lower.
