Impact of the CNT Parameter Variations on Performance of Digital Circuits Based on CNTFET
نویسندگان
1 Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, 70126, Bari, Italy
2 Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy, 70125, Bari, Italy
doi
10.22034/ijnn.2024.2014292.2447چکیده
In this paper we propose a method to study the impact of the CNT parameter variations on performance of CNTFET digital circuits. In particular we consider CNT parameters that fully identify the geometrical properties of a regular CNT, which are the length and structural indices (n, m) of CNT. We analyse in particular the effects on NAND gate using a N and P type CNTFET, polarizing at a fixed voltage and varying the CNT parameters. As regards the indices, we limit the analysis to zig-zag CNT, highlighting that the proposed procedure can be applied to other types of CNT.
