An Experimental Investigation of ‎Deposition of ZnS Materials on Glass ‎Substrate with SILAR‎

نویسندگان
El Farri, Haytham ID 1
El Gana, Lahoucine ID 2
Znaidi, Latifa ID 3
Yousfi, Amal ID 4
Fahoume, Mounir ID 5

1 Department of Physics, Faculty of Sciences, University Ibn Tofail, BP 14000, ‎ Kenitra, Morocco

2 Department of Physics, Faculty of Sciences, University Ibn Tofail, BP 14000, ‎ Kenitra, Morocco

3 Department of Physics, Faculty of Sciences, University Ibn Tofail, BP 14000, ‎ Kenitra, Morocco

4 Department of Physics, Faculty of Sciences, University Ibn Tofail, BP 14000, ‎ Kenitra, Morocco

5 Department of Physics, Faculty of Sciences, University Ibn Tofail, BP 14000, ‎ Kenitra, Morocco

doi
10.22034/ijnn.2023.562891.2285
چکیده

   The formation of zinc sulfide (ZnS) is the most promising semiconductor material, particularly for optical and photovoltaic applications. The influence of the number of cycles on ZnS thin films deposited at room temperature was studied. According to our findings, the results showed that the number of deposition cycles affected the crystallinity, grain size, film thickness, and shape of the obtained films. The XRD analysis confirmed that the thin films fabricated had a crystalline structure of zinc blend ZnS with a preferred orientation in the plan (111). The gap energy of ZnS has been obtained in the range of 3.34 eV to 3.68 eV.

کلیدواژه‌ها
SILAR, Zns, XRD, Band gap energy, Sulfurization, SEM.‎