A Technique, Based on Thevenin Equivalent Method, to Study the Noise Performance of Analog Circuits Involving both CNTFET and MOS Devices
نویسندگان
1 Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, 70126, Bari, Italy
2 Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy, 70125, Bari, Italy
doi
10.22034/ijnn.2023.1988468.2327چکیده
This paper presents a procedure, based on Thevenin equivalent method, to analyse the noise effects in analog circuits based on CNTFET and MOS devices. To achieve this goal, we use a semi-empirical compact CNTFET model, already proposed by us, including noise source contributions, and the BSIM4 model for MOS device. After a brief review of these models, as example of analog circuit, the proposed procedure is applied to study a basic current mirror and the simulation results allow to determine easily the different noise contribution of every single source. The software used is Advanced Design System (ADS) which is compatible with the Verilog-A programming language.
