A Procedure to Analyze a CNTFET-Based NOT Gate with Parasitic Elements of Interconnection Lines
نویسندگان
1 Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy, 70125, Bari, Italy
2 Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, 70126, Bari, Italy
doi
چکیده
In this paper we analyze an application of CNTFET in the design of NOT gate, in which parasitic elements of interconnection lines are considered. At first we study the time domain analysis of NOT gate without to consider the parasitic elements of interconnection lines, in order to compare the obtained results with those in which the parasitic elements are considered, showing how they limit the high-speed performances of CNTs.
