Modeling of Manufacturing of Field-Effect Heterotransistors without P-n-junctions to Optimize Decreasing their Dimensions
نویسندگان
1 1. Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia 2. Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky street, Nizhny Novgorod, 603950, Russia
2 1. Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia 3. Nizhny Novgorod Academy of the Ministry of Internal Affairs of Russia, 3 Ankudinovskoe Shosse, Nizhny Novgorod, 603950, Russia
doi
چکیده
It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increasing of homogeneity of dopant in doped area. In this paper, we consider manufacturing of a field-effect heterotransistor without p-njunction. Framework the approach of manufacturing, we consider a heterostructure with specific configuration, doping required parts of the heterostructure by dopant diffusion or by ion implantation and optimization of annealing of dopant and/or radiation defects. The optimization gives us possibility to decrease dimensions of field-effect transistors. We introduce an analytical approach to model technological processes without crosslinking concentrations of dopant and radiation defects on interfaces between layers of heterostructure.
