Hopping Conductivity in Single Crystals (Cd0.6Zn0.32Mn0.08)3As2 (RESEARCH NOTE)

نویسندگان
Alam, M. ID 1
Nikulicheva, T. B. ID 2
Lahderanta, E. ID 3
Kochura, A. V. ID 4
Zakhvalinskii, V. S. ID 5
Shakhov, M. A. ID 6
Piljuk, E. A. ID 7
Ivanchikhin, S. V. ID 8

1 University of Asia Pacific, Department of Electrical and Electronic Engineering, Dhaka, Bangladesh

2 Belgorod State National Research University, Department of General and Applied Physics, Belgorod, Russia

3 Department of Mathematics and Physics, Lappeenranta University of Technology, Lappeenranta, Finland

4 Regional Centre of Nanotechnology, South-West State University, Kursk, Russia

5 Belgorod State National Research University, Department of General and Applied Physics, Belgorod, Russia

6 Ioffe Institute Russia, Laboratory of Kinetic Phenomena in a Solid at Low, Saint-Petersburg, Russia

7 Belgorod State National Research University, Department of General and Applied Physics, Belgorod, Russia

8 Belgorod State National Research University, Department of General and Applied Physics, Belgorod, Russia

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چکیده

The growth processes of Tetragonal single crystals of solid solution (Cd0.6Zn0.32Mn0.08)3As2, space group P42/nmc, has been synthesized by Bridgman method. Conductivity and magnetoresistance of (Cd0.6Zn0.32Mn0.08)3As2 were measured in the range 1.6K to 300K and in magnetic field up to 25 T. Crossover from Mott variable-range-hopping conductivity mechanism close to helium temperatures. In this work, we  found the width of the coulomb D = 0.21 meV and a rigid gap δ = 0.026 meV in the density of localized states, concentration and localization radius of charge carriers.

کلیدواژه‌ها
single crystals, solid solutions, hopping conductivity, Dirac semimetal