فهرست نشریات علمی دسترسی آزاد ایران

In this study an ultra-broad band, low-power, and high-gain CMOS Distributed Amplifier (CMOS-DA) utilizing a new gain-cell based on the inductively peaking cascaded structure is presented. It is created bycascading of inductively coupled common-source (CS) stage and Regulated Cascode Configuration (RGC).The proposed three-stage DA is simulated in 0.13 μm CMOS process. It achieves flat and high   of 26.5 ±0.4 dB over the frequencies range from DC up to 13 GHz 3-dB bandwidth, and it dissipates only 9.95 mW.The IIP3 is simulated and achieved -10 dBm at 6 GHz. Also, simulated input referred 1-dB compressionpoint at 6 GHz achieves the value of -20 dBm. Both input and output matches are better than -11 dB. Toobtain the low power and high gain requirements, the advantages of the bulk terminal are exploited in theproposed CMOS-DA. It adopts the method of forward body biasing in output MOS transistor to achievehigher transconductance and lower power consumption. Additionally, the Monte Carlo (MC) simulation isperformed to take into account the risks associated with various input parameters which they receive little orno consideration in simulating of designs utilizing ideal components. MC simulation predicts an estimate ofthe good accuracy performance of the proposed design under various conditions.