فهرست نشریات علمی دسترسی آزاد ایران

Graphene (G)/Si Schottky junction solar cells (SJSCs) suffer from very low conversion efficiency due to the weak potential barrier between graphene and Si layers. In this study, a G/Si SJSC with an interlayer of graphene quantum dots (GQDs) is introduced. GQDs act as a potential barrier, resulting in the enhancement of the built-in electric field. The electrical properties of the graphene layer are computed based on the Kubo-Drude formalism, where its thickness and Fermi level are set to 0.34 nm and 0.3 eV , respectively. The electrical permittivity of GQDs is calculated through the Cole-Cole model, where its diameter and height are considered to be 66 nm and 6 nm , respectively. Results of the simulation reveal a 27% increment in short circuit current density despite decreased absorption compared to the cell without GQDs. Also, the conversion efficiency (ɳ) of the G/Si SJSC boosts up to 28% by embedding 11 layers of GQDs between graphene and the Si layers. Finally, a ɳ equal to 10.4% is reported for G/Si SJSC for an absorber layer with a thickness of 2400 nm .