Effect of nonlinear gain factor on the performance of green InGaN

نویسندگان
doi
doi.org/10.71577/JOPN.2026.1204060
چکیده

The gain in the rate equations of laser diodes is linear or nonlinear, and the laser diode dynamics depend on the form of optical gain. In this study, the influence of nonlinear gain factor on the performance characteristics of green InGaN single-quantum well laser diode structures with an emission wavelength of 520 nm was investigated. Different values of nonlinear gain factor were used to study the dynamic characteristics of green InGaN laser diodes. This factor has important effects on the carrier and photon dynamics and on the output power of these laser diodes. Rate equations of the carriers and photons were numerically solved, and the time variations of carrier density, photon density, and output power were obtained. Carrier density decay rate was calculated. Also the turn-on delay time was analyzed and it showed that the time to reach the laser is approximately constant for different values of nonlinear gain factor.