فهرست نشریات علمی دسترسی آزاد ایران

As conventional CMOS technology approaches its physical scaling limits, emerging nanoelectronic devices have attracted significant attention for future high-performance and low-power integrated circuits. Among these devices, graphene nanoribbon field-effect transistors (GNRFETs) offer superior carrier mobility, near-ballistic transport, and excellent electrostatic control, making them promising candidates for next-generation digital circuit applications. In this work, a comprehensive performance analysis of CMOS 45 nm, FinFET 7 nm, and a proposed Schottky-Barrier Double-Gate Graphene Nanoribbon Field-Effect Transistor (SB-GNRFET-DG) inverter is presented using HSPICE simulations. The investigated technologies were evaluated in terms of propagation delay, average current, power consumption, and power-delay product (PDP) under identical operating conditions. The simulation results demonstrate that the proposed SB-GNRFET-DG inverter achieves the best overall performance, exhibiting an average propagation delay of 0.505 ps, average power consumption of 0.465 µW, and an ultra-low PDP of 0.235 aJ. In comparison, the CMOS 45 nm inverter shows a delay of 4.49 ps and a PDP of 277 aJ, while the FinFET 7 nm inverter achieves a delay of 3.105 ps and a PDP of 82.76 aJ. Furthermore, load capacitance sweep analysis confirms the excellent switching capability and energy efficiency of the proposed design under various loading conditions. The obtained results indicate that the SB-GNRFET-DG inverter significantly outperforms conventional CMOS and FinFET technologies, highlighting its strong potential for future ultra-low-power and high-speed nanoelectronic systems.